The pull-in behavior of electrostatically actuated bistable microstructures
The pull-in behavior of electrostatically actuated bistable microstructures
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DOI：
10.1088/0960-1317/18/5/055026
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发表时间：
2008-05-01
影响因子：
2.3
通讯作者：
Craighead, Harold
中科院分区：
文献类型：
--
作者：
Krylov, Slava;Ilic, Bojan R.;Craighead, Harold
本文介绍了在分布静电力作用下，初始弯曲的固支微梁的理论和实验研究结果。建立了浅圆Euler-Bernoulli拱的降阶Galerkin模型和一致性集总模型，并进行了数值分析验证，研究了各参数对稳定性的影响。由于通用的机械和静电非线性的独特组合，该设备的电压偏转特性可能有两个最大值，这意味着连续的快速通过屈曲和拉入不稳定性和双稳态的梁的存在。第一个临界电压可以高于或低于第二个，而稳定的挠度显着大于直梁。静电驱动梁中出现折断所需的最小初始高程小于均匀偏转独立载荷的情况;评估了该高程的闭合形式近似值。器件采用深反应离子刻蚀法从绝缘体上硅（SOI）晶片上制备，并通过光学显微镜和扫描电子显微镜对其面内响应进行了表征。获得的实际尺寸的设备的模型结果与实验数据吻合良好。
The results of theoretical and experimental investigation of an initially curved clamped-clamped microbeam actuated by a distributed electrostatic force are presented. Reduced-order Galerkin and consistently constructed lumped models of the shallow Euler-Bernoulli arch were built and verified by numerical analysis, and the influence of various parameters on the stability was investigated. Due to the unique combination of generic mechanical and electrostatic nonlinearities, the voltage-deflection characteristic of the device may have two maxima implying the existence of sequential snap-through buckling and pull-in instability and of bistability of the beam. The first critical voltage can be higher or lower than the second one, while the stable deflections are significantly larger than in a straight beam. The minimal initial elevation required for the appearance of the snap-through in the electrostatically actuated beam is smaller than in the case of uniform deflection-independent loading; a closed-form approximation of this elevation was evaluated. The devices were fabricated from silicon on insulator (SOI) wafer using deep reactive ion etching and in-plane responses were characterized by means of optical and scanning electron microscopy. Model results obtained for the actual dimensions of the device were in good agreement with the experimental data.