Fully-relaxed n-AlGaN on AlN / Al2O3 templates using strain-relaxed super-lattice buffer layers
Fully-relaxed n-AlGaN on AlN / Al2O3 templates using strain-relaxed super-lattice buffer layers
复制标题
使用应变松弛超晶格缓冲层的 AlN / Al2O3 模板上的完全松弛 n-AlGaN
DOI：
10.1016/j.matchemphys.2022.126738
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发表时间：
2022
影响因子：
4.6
通讯作者：
Yamada Hisashi
中科院分区：
文献类型：
--
作者：
Li Chao;Qiu Boqi;Yoshioka Yuri;Hirakawa Kazuhiko;Zhang Ya;Yamada Hisashi
采用应变松弛超晶格（SRSL）缓冲层在AlN/ al2o3模板上进行金属有机化学气相沉积，研究了2.5 μm厚N - Al 0.6 Ga 0.4 N的应变松弛、表面形貌和螺纹位错。SRSLs由11-115 nm Al 0.50 Ga 0.50 N/23 nm Al 0.75 Ga 0.25 N多层组成。当Al 0.50 Ga 0.50 N厚度大于69 nm时，在SRSL上生长的N - Al 0.6 Ga 0.4 N层具有完全应变松弛和光滑的表面形貌。N - al 0.6 Ga 0.4 N在（0002）和（101 - 2）面上的x射线摇摆曲线的半最大值全宽度分别为237和468 arcsec。螺纹螺纹位错和螺纹边缘位错估计分别为1.2× 10 8 cm−2和1.1× 10 9 cm−2。SRSL缓冲层能够实现100%的应变松弛，同时具有光滑的表面和低的螺纹位错密度。
Strain relaxation, surface morphology, and threading dislocations of 2.5–μm-thick n–Al 0.6 Ga 0.4 N, grown by metal–organic chemical vapor deposition on AlN/Al 2 O 3 templates using strain relaxed super lattice (SRSL) buffer layers, are investigated. The SRSLs are consisted of 11–115 nm Al 0.50 Ga 0.50 N/23 nm Al 0.75 Ga 0.25 N multiple layers. The n–Al 0.6 Ga 0.4 N layer is fully strain relaxed and smooth surface morphology when grown on the SRSL with Al 0.50 Ga 0.50 N thickness over 69 nm. The full width at half maximum values of X–ray rocking curves of n-Al 0.6 Ga 0.4 N for (0002) and (10 1‾ 2) planes are 237 and 468 arcsec, respectively. The threading screw dislocations and threading edge dislocations are estimated as 1.2× 10 8 cm− 2 and 1.1× 10 9 cm− 2, respectively. The SRSL buffer layer enables to achieve 100% strain relaxation together with a smooth surface and a low threading dislocation density.