Investigation of the electrical properties of metal-oxide-metal structures formed from RF magnetron sputtering deposited MgTiO3 films
Investigation of the electrical properties of metal-oxide-metal structures formed from RF magnetron sputtering deposited MgTiO3 films
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DOI：
10.1016/j.cap.2011.12.012
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发表时间：
2012-05-01
影响因子：
2.4
通讯作者：
Lin, Ying-Hong
中科院分区：
文献类型：
--
作者：
Huang, Cheng-Liang;Wang, Sih-Yin;Lin, Ying-Hong
采用射频磁控溅射法在不同衬底温度下制备了MgTiO 3高k电介质薄膜。用X射线衍射、原子力显微镜对薄膜进行了表征。实验结果表明，衬底温度对化学计量的影响很小。研究了不同沉积温度下MgTiO_3金属-绝缘体-金属（MIM）电容器Pt/MgTiO_3/Pt/SiO_2/n-Si的电学性能。结果表明，在200 ℃下制备的MgTiO 3（210 nm）MIM电容器显示出整体高性能，例如类似于1.2 nF/um（2）的高电容密度，在5 V下1.51 × 10（-9）A/cm（2）的低漏电流，低电容电压系数和良好的频率色散特性。所有这些都表明MgTiO 3 MIM电容器非常适合用于Si模拟电路应用或动态随机存取存储器（DRAM）单元。(C)2011 Elsevier B. V.保留所有权利。
Thin films of MgTiO3 high-k dielectric have been prepared by RF magnetron sputtering deposition at various substrate temperatures. X-ray diffraction, atomic force microscopy were used to characterize the deposited films. Experimental results show that substrate temperature has little effect on the stoichinometry. The electrical properties of MgTiO3 metal-insulator-metal (MIM) capacitors were investigated at various deposition temperatures, Pt/MgTiO3/Pt/SiO2/n-Si, were studied. It is shown that the MgTiO3 (210 nm) MIM capacitor fabricated at 200 degrees C shows an overall high performance, such as a high capacitance density of similar to 1.2 nF/um(2), a low leakage current of 1.51 x 10(-9) A/cm(2) at 5 V, low-voltage coefficients of capacitance, and good frequency dispersion properties. All of these indicate that the MgTiO3 MIM capacitors are very suitable for use in Si analog circuit application or dynamic random access memory (DRAM) cell. (C) 2011 Elsevier B.V. All rights reserved.