Resonant photodiffractive effect in semi-insulating multiple quantum wells
Resonant photodiffractive effect in semi-insulating multiple quantum wells
复制标题
半绝缘多量子阱中的共振光衍射效应
DOI：
10.1364/josab.7.002217
复制
发表时间：
1990
影响因子：
1.9
通讯作者：
A. Glass
中科院分区：
文献类型：
--
作者：
D. Nolte;D. Olson;G. Doran;W. Knox;A. Glass
我们利用半绝缘多量子威尔斯阱，将光折变效应的全息特性与量子限制激子的大共振光学非线性联合收割机结合起来。用质子注入法使GaAs-AlGaAs多量子阱结构半绝缘化。注入损伤产生的缺陷，可用于捕获和存储电荷在瞬态全息记录通过相干激发。电荷存储和谐振光学非线性的优点联合收割机可以产生具有大灵敏度的新型光学器件。这些设备的图像处理的潜在用途是通过使用Franz-Keldysh效应在四波混频在830 nm附近的波长证明。
We use semi-insulating multiple quantum wells to combine the holographic properties of the photorefractive effect with the large resonant optical nonlinearities of quantum-confined excitons. GaAs–AlGaAs multiple-quantum-well structures are made semi-insulating by proton implantation. The implant damage produces defects that are available to trap and store charge during transient holographic recording by means of coherent excitation. The advantages of charge storage and resonant optical nonlinearity combine to produce new optical devices with large sensitivities. The potential use of these devices for image processing is demonstrated by using the Franz–Keldysh effect in four-wave mixing at wavelengths near 830 nm.