High resolution fluorescence imaging of damage regions in H+ ion implanted Nd:MgO:LiNbO3 channel waveguides
High resolution fluorescence imaging of damage regions in H+ ion implanted Nd:MgO:LiNbO3 channel waveguides
复制标题
H 离子注入 Nd:MgO:LiNbO3 通道波导损伤区域的高分辨率荧光成像
DOI：
10.1063/1.3064164
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发表时间：
2009-01-05
影响因子：
4
通讯作者：
Chen, Feng
中科院分区：
文献类型：
--
作者：
Jaque, Daniel;Chen, Feng
本文报道了用轻离子（H+）注入掺钕MgO：LiNbO 3晶体制作的沟道波导的荧光成像。钕离子的光谱性质已被发现，只有在核损伤区的修改，而保持不变的电子之一。轻离子注入波导的荧光图像已被发现是完全不同的中质量离子注入所获得的，揭示了不同的波导形成机制发生在每种情况下。
We report on the fluorescence imaging of channel waveguides fabricated by light ion (H+) implantation in neodymium (Nd) doped MgO:LiNbO3 crystals. The spectroscopic properties of Nd ions have been found to be modified only at the nuclear damage region while remaining unaltered at the electronic one. The fluorescence image of the light ion implanted waveguide has been found to be completely different from that obtained by medium-mass ion implantation, revealing the different waveguide formation mechanisms taking place in each case.