Heterogeneous nanometer-scale Joule and Peltier effects in sub-25 nm thin phase change memory devices
Heterogeneous nanometer-scale Joule and Peltier effects in sub-25 nm thin phase change memory devices
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DOI：
10.1063/1.4896492
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发表时间：
2014-09-28
影响因子：
3.2
通讯作者：
King, William P.
中科院分区：
文献类型：
--
作者：
Grosse, Kyle L.;Pop, Eric;King, William P.
利用扫描焦耳膨胀显微镜（SJEM）测量了11和22 nm薄Ge 2Sb 2 Te 5（GST）相变存储器（PCM）薄膜的异质功耗，空间分辨率低于50 nm，温度分辨率接近0.2K。异质焦耳和珀耳帖效应解释使用有限元分析（FEA）模型与六方密堆积和面心立方GST相的混合物。转移长度法测量和有效介质理论计算产生的GST电阻率，GST-TiW接触电阻率，在不同的退火温度下的GST薄膜的结晶分数。SJEM测量和FEA建模的进一步比较也预测了薄GST膜的热电势。这些纳米级的焦耳，热电和PCM薄膜中的界面效应的测量可能会导致高能效设计的高度规模的PCM技术。(C)2014 AIP Publishing LLC.
We measure heterogeneous power dissipation in phase change memory (PCM) films of 11 and 22 nm thin Ge2Sb2Te5 (GST) by scanning Joule expansion microscopy (SJEM), with sub-50 nm spatial and similar to 0.2K temperature resolution. The heterogeneous Joule and Peltier effects are explained using a finite element analysis (FEA) model with a mixture of hexagonal close-packed and face-centered cubic GST phases. Transfer length method measurements and effective media theory calculations yield the GST resistivity, GST-TiW contact resistivity, and crystal fraction of the GST films at different annealing temperatures. Further comparison of SJEM measurements and FEA modeling also predicts the thermopower of thin GST films. These measurements of nanometer-scale Joule, thermoelectric, and interface effects in PCM films could lead to energyefficient designs of highly scaled PCM technology. (C) 2014 AIP Publishing LLC.