Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors
Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors
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DOI：
10.1063/1.3159832
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发表时间：
2009-07-06
影响因子：
4
通讯作者：
Chung, Ho Kyoon
中科院分区：
文献类型：
--
作者：
Park, Jin-Seong;Kim, Tae-Woong;Chung, Ho Kyoon
我们制造了6.5英寸。柔性全彩顶发射有源矩阵有机发光二极管显示在聚酰亚胺（PI）衬底驱动的非晶铟镓氧化锌薄膜晶体管（a- igzo TFTs）上。a-IGZO tft的场效应迁移率（mu(FE)）为15.1 cm(2)/V s，亚阈值斜率为0.25 V/dec，阈值电压（V- th）为0.9 V。PI基板上的tft电特性与玻璃基板上的tft电特性难以区分，包括在15 V下长栅极偏置1 h后的偏置应力不稳定性，并表现出高度的空间均匀性。在10 μ m厚PI衬底上的TFT样品在拉伸和压缩下可以承受弯曲至R=3 mm，而没有任何性能下降。(C) 2009年美国物理研究所。(DOI: 10.1063/1.3159832)
We have fabricated 6.5 in. flexible full-color top-emission active matrix organic light-emitting diode display on a polyimide (PI) substrate driven amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). The a-IGZO TFTs exhibited field-effect mobility (mu(FE)) of 15.1 cm(2)/V s, subthreshold slope of 0.25 V/dec, threshold voltage (V-TH) of 0.9 V. The electrical characteristics of TFTs on PI substrate, including a bias-stress instability after 1 h long gate bias at 15 V, were indistinguishable from those on glass substrate and showed high degree of spatial uniformity. TFT samples on 10 mu m thick PI substrate withstood bending down to R=3 mm under tension and compression without any performance degradation. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3159832]