Epitaxial growth of Cu_2O films on MgO by sputtering
Epitaxial growth of Cu_2O films on MgO by sputtering
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MgO上溅射外延生长Cu_2O薄膜
DOI：
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发表时间：
1992
期刊：
影响因子：
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通讯作者：
Hyung Keun Kim
中科院分区：
文献类型：
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作者：
Dean J. Miller;J. Hettinger;R. Chiarello;Hyung Keun Kim
Cu_2O 薄膜的外延生长因其在多层器件和超晶格的开发中提供的独特潜力而受到人们的极大关注。虽然可以对通过任何技术制备的外延薄膜进行基础研究，但人工分层超晶格的生长需要薄膜在沉积过程中外延生长。本研究直接研究了溅射沉积过程中 Cu_2O 在 MgO 基底上的生长情况。虽然可以生产Cu_2O外延薄膜，但观察到马赛克结构。薄膜的结构可能与岛状物合并形成连续薄膜的生长机制有关。
The epitaxial growth of Cu_2O films is of significant interest for the unique potential they offer in the development of multilayer devices and superlattices. While fundamental studies may be carried out on epitaxial films prepared by any technique, the growth of artificially layered superlattices requires that films grow epitaxially during deposition. The present study examined the growth of Cu_2O on MgO substrates directly during deposition by sputtering. Although epitaxial thin films of Cu_2O could be produced, a mosaic structure was observed. The structure of the film may be related to the growth mechanism in which islands coalesce to form a continuous film.