Combined molecular beam epitaxy and diffractometer system forin situx-ray studies of crystal growth
Combined molecular beam epitaxy and diffractometer system forin situx-ray studies of crystal growth
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用于晶体生长原位射线研究的分子束外延和衍射仪组合系统
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
A. Erko
中科院分区：
文献类型：
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作者：
B. Jenichen;W. Braun;V. Kaganer;A. Shtukenberg;L. Däweritz;C. Schulz;K. Ploog;A. Erko
在存储环 BESSY II 的专用摆动光束线上构建了分子束外延 (MBE) 机器和六圆衍射仪的组合，用于 III-V 族化合物晶体生长的原位研究。我们系统中的生长条件达到了高 MBE 标准，非冷却基础压力为 2×10−10 mbar。快速进入装载锁可用于样品交换。超高真空室中的大面积铍窗口使我们能够测量高达 45° 的入口和出口角度的反射，即大的垂直动量传递是可能的。原位反射高能电子衍射和 X 射线荧光测量可以与 X 射线散射同时进行。在我们的系统中制备和检查的 GaAs(001) 表面显示平台宽度为 450 nm，β(2×4) 重建域尺寸为 210 nm。通过观察逐层同质外延生长过程中的强度振荡证明了时间分辨 X 射线衍射研究的可能性...
A combination of a molecular beam epitaxy (MBE) machine and a six circle diffractometer has been constructed at a dedicated wiggler beamline at the storage ring BESSY II for in situ investigations of III–V compound crystal growth. The growth conditions in our system reach a high MBE standard with a noncooled base pressure of 2×10−10 mbar. A fast entry load lock is available for sample exchange. Large-area Be windows in the ultrahigh vacuum chamber allow us to measure reflections at entrance and exit angles up to 45°, i.e., large perpendicular momentum transfers are possible. In situ reflection high energy electron diffraction and x-ray fluorescence measurements can be performed simultaneously with x-ray scattering. A GaAs(001) surface prepared and examined in our system reveals terrace widths of 450 nm and β(2×4) reconstruction domain sizes of 210 nm. The possibility of time-resolved x-ray diffraction studies is demonstrated by observation of intensity oscillations during layer-by-layer homoepitaxial grow...