Photoelectrochemical Characterisation of Chromia Scales Thermally Grown on Various Metal Substrates
Photoelectrochemical Characterisation of Chromia Scales Thermally Grown on Various Metal Substrates
复制标题
各种金属基底上热生长的氧化铬鳞片的光电化学表征
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
J. Petit
中科院分区：
文献类型：
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作者：
Y. Wouters;A. Galerie;J. Petit
用光电化学(PEC)表征了在不同条件下在几种形成铬的金属衬底上生长的铬膜，突出了它们各自的禁带(3.0和3.5 eV)随半导体类型(n，p和绝缘体，或多或少掺杂)的变化而出现的两个半导体相的存在。当最高带隙相位(3.5 eV)接近绝缘体时，被识别为外部子层的最高带隙相位清楚地表明了该层的保护特性。
Chromia scales grown on several chromia-forming metallic substrates in various conditions were characterised by photoelectrochemistry (PEC), highlighting the presence of two semiconductor phases signed by their respective bandgaps (3.0 and 3.5 eV) with variations of semiconduction type (n, p and insulator, more or less doped). The protective character of the scale was clearly demonstrated when the highest bandgap phase (3.5 eV), identified as the external subscale was close to an insulator.