Theoretical possibilities of InxGa1-xN tandem PV structures
Theoretical possibilities of InxGa1-xN tandem PV structures
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DOI：
10.1016/j.solmat.2004.08.020
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发表时间：
2005-05
影响因子：
6.9
通讯作者：
Hasna Hamzaoui;A. Bouazzi;B. Rezig
中科院分区：
文献类型：
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作者：
Hasna Hamzaoui;A. Bouazzi;B. Rezig
我们设计了一个由N个连续的p-n结组成的InxGa 1 −xN串联结构模型，从不太复杂的结构的两个结到最复杂的六个结。我们模拟了每种结构在AM 1.5照明下的光电流密度和开路电压，以优化形成一个结构的连续结的数量。对于每个N值，我们假设每个结吸收了前一个结没有吸收的光子。根据太阳光谱中光子的重新分配并从GaN的能隙开始，我们固定了每个结的差距，该间隙在结构中提供相同量的光电流密度。在此基础上，我们精确地计算了电流密度，并优化了每个结的p层和n层的厚度，使其具有相同的输出电流密度。镍的评估：本征浓度允许计算的饱和电流密度和开路电压的每个结。假设总填充因子为80%，我们将输出峰值功率除以入射太阳能功率，并获得每个结构的效率。InxGa 1 −xN的数值取自相关文献。计算的效率从两结串联结构的27.49%到六结结构的40.35%。六结InxGa 1-xN串联结构具有约5.34V的开路电压和9.1mA/cm 2的短路电流密度。
We designed a model of InxGa1−xN tandem structure made of N successive p–n junctions going from two junctions for the less sophisticated structure to six junctions for the most sophisticated. We simulated the photocurrent density and the open-circuit voltage of each structure under AM 1.5 illumination in goal to optimize the number of successive junctions forming one structure. For each value of N, we assumed that each junction absorbs the photons that are not absorbed by the preceding one. From the repartition of photons in the solar spectrum and starting from the energy gap of GaN, we fixed the gap of each junction that gives the same amount of photocurrent density in the structure. Then we calculated the current density accurately and optimized the thicknesses of p and n layers of each junction to make it give the same output current density. The evaluation of ni: the intrinsic concentration permitted to calculate the saturation current density and the open-circuit voltage of each junction. Assuming an overall fill factor of 80%, we divided the output peak power by the incident solar power and obtained the efficiency of each structure. The numerical values for InxGa1−xN were taken from the relevant literature. The calculated efficiency goes from 27.49% for the two-junction tandem structure to 40.35% for a six-junction structure. The six-junction InxGa1−xN tandem structure has an open-circuit voltage of about 5.34V and a short circuit current density of 9.1mA/cm2.