High-Output Lead-Free Flexible Piezoelectric Generator Using Single-Crystalline GaN Thin Film
High-Output Lead-Free Flexible Piezoelectric Generator Using Single-Crystalline GaN Thin Film
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DOI：
10.1021/acsami.8b01281
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发表时间：
2018-04-18
影响因子：
9.5
通讯作者：
Ryou, Jae-Hyun
中科院分区：
文献类型：
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作者：
Chen, Jie;Oh, Seung Kyu;Ryou, Jae-Hyun
压电发电机（PEG）是一种很有前途的电源，为未来的自我供电的电子产品，通过转换无处不在的环境机械能转化为电能。然而，大多数高输出PEG是由锆钛酸铅制成的，其中有害的铅可能对人类和环境都是潜在的风险，限制了它们的真实的应用。III-氮化物（BIN）由于其高化学稳定性和压电性，可以成为制备稳定，安全和高效PEG的潜在候选者。此外，PEG优选是柔性的而不是刚性的，以更好地收获低量级的机械能。本文中，通过将单晶外延层从硅衬底转移到柔性衬底，由GaN薄膜制成高输出、无铅且柔性的PEG（F-PEG）。通过弯曲F-PEG，输出电压、电流密度和功率密度可分别达到28 V、1 μ www.example.com（-2）和6 μ www.example.com（-2）。人类手指弯曲产生的电力足以点亮商用可见光发光二极管和为商用电容器充电。经过10000次循环测试，其输出性能仍保持在初始值的95%以上。这种高稳定性、高输出、无铅的GaN薄膜F-PEG在未来的自供电电子器件和系统中具有巨大的潜力。
Piezoelectric generators (PEGs) are a promising power source for future self-powered electronics by converting ubiquitous ambient mechanical energy into electricity. However, most of the high-output PEGs are made from lead zirconate titanate, in which the hazardous lead could be a potential risk to both humans and environment, limiting their real applications. III-Nitride (BIN) can be a potential candidate to make stable, safe, and efficient PEGs due to its high chemical stability and piezoelectricity. Also, PEGs are preferred to be flexible rather than rigid, to better harvest the low-magnitude mechanical energy. Herein, a high-output, lead-free, and flexible PEG (F-PEG) is made from GaN thin film by transferring a single-crystalline epitaxial layer from silicon substrate to a flexible substrate. The output voltage, current density, and power density can reach 28 V, 1 mu A.cm(-2), and 6 mu W.cm(-2), respectively, by bending the F-PEG. The generated electric power by human finger bending is high enough to light commercial visible light-emitting diodes and charge commercial capacitors. The output performance is maintained higher than 95% of its original value after 10 000-cycle test. This highly stable, high-output, and lead-free GaN thin-film F-PEG has the great potential for future self-powered electronic devices and systems.