Dislocation-free GaAsyP1−x−yNx/GaP0.98N0.02 quantum-well structure lattice- matched to a Si substrate
Dislocation-free GaAsyP1−x−yNx/GaP0.98N0.02 quantum-well structure lattice- matched to a Si substrate
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无位错 GaAsyP1−x−yNx/GaP0.98N0.02 量子阱结构，与 Si 衬底晶格匹配
DOI：
10.1063/1.1395519
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发表时间：
2001
影响因子：
4
通讯作者：
Y. Furukawa
中科院分区：
文献类型：
--
作者：
Y. Fujimoto;H. Yonezu;A. Utsumi;K. Momose;Y. Furukawa
我们报道了一种晶格匹配和无位错的GaAsyP 1 −x−yNx/GaP0.98N0.02量子阱（QW）结构可以在Si衬底上生长。在所有层的生长期间维持二维生长模式。据证实，量子阱结构是晶格匹配的Si衬底的晶格常数由X射线衍射测量。通过透射电子显微镜所拍摄的横截面图像显示，在QW结构处没有观察到穿线位错或失配位错。
We report that a lattice-matched and dislocation-free GaAsyP1−x−yNx/GaP0.98N0.02 quantum-well (QW) structure can be grown on a Si substrate. A two-dimensional growth mode was maintained during growth of all the layers. It was confirmed that the QW structure was lattice-matched to the Si substrate from the lattice constant measured by x-ray diffraction. A cross-sectional image taken by transmission electron microscopy revealed that no threading dislocations or misfit dislocations were observed at the QW structure.