Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off
Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off
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DOI：
10.1063/1.124693
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发表时间：
1999-09-06
影响因子：
4
通讯作者：
Johnson, NM
中科院分区：
文献类型：
--
作者：
Wong, WS;Sands, T;Johnson, NM
使用脉冲准分子激光加工在蓝宝石生长衬底上预制氮化铟镓（InGaN）多量子阱（MQW）发光二极管（LED）薄膜。生长在蓝宝石衬底上的薄膜InGaN MQW LED结构首先用基于氰基丙烯酸乙酯的粘合剂粘合到Si支撑衬底上。将单个600 mJ/cm（2）、38 ns KrF（248 nm）准分子激光脉冲引导通过透明蓝宝石，随后进行低温热处理以移除衬底。然后通过将InGaN LED/粘合剂/Si结构浸入丙酮中以从支撑Si衬底释放器件来制造自立式InGaN LED膜。激光剥离前后LED的电流-电压特性和室温发射光谱没有变化。(C)1999年美国物理学会。[S0003-6951（99）02636-4]。
Indium-gallium nitride (InGaN) multiple-quantum-well (MQW) light-emitting diode (LED) membranes, prefabricated on sapphire growth substrates, were created using pulsed-excimer laser processing. The thin-film InGaN MQW LED structures, grown on sapphire substrates, were first bonded onto a Si support substrate with an ethyl cyanoacrylate-based adhesive. A single 600 mJ/cm(2), 38 ns KrF (248 nm) excimer laser pulse was directed through the transparent sapphire, followed by a low-temperature heat treatment to remove the substrate. Free-standing InGaN LED membranes were then fabricated by immersing the InGaN LED/adhesive/Si structure in acetone to release the device from the supporting Si substrate. The current-voltage characteristics and room-temperature emission spectrum of the LEDs before and after laser lift-off were unchanged. (C) 1999 American Institute of Physics. [S0003-6951(99)02636-4].