Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices
Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices
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DOI：
10.1088/1367-2630/15/12/125006
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发表时间：
2013-12-05
影响因子：
3.3
通讯作者：
Van de Walle, Chris G.
中科院分区：
文献类型：
--
作者：
Kioupakis, Emmanouil;Yan, Qimin;Van de Walle, Chris G.
氮化物发光二极管是高效固态照明的一种有前途的解决方案，但其在高功率下的性能受到效率下降问题的影响。以前的实验和理论工作已经确定俄歇复合，一种三粒子非辐射载流子复合机制，作为下降的可能原因。在这项工作中，我们使用第一性原理计算阐明的辐射和俄歇复合率对温度，载流子密度和量子阱限制的依赖性。我们的计算数据的复合系数的温度依赖性是在很好的协议与实验，并提供进一步验证俄歇复合的作用，效率降低。极化场和相空间填充对器件效率产生负面影响，因为它们在给定电流密度下增加了工作载流子密度，并增加了损耗到俄歇复合的载流子的分数。
Nitride light-emitting diodes are a promising solution for efficient solid-state lighting, but their performance at high power is affected by the efficiency-droop problem. Previous experimental and theoretical work has identified Auger recombination, a three-particle nonradiative carrier recombination mechanism, as the likely cause of the droop. In this work, we use first-principles calculations to elucidate the dependence of the radiative and Auger recombination rates on temperature, carrier density and quantum-well confinement. Our calculated data for the temperature dependence of the recombination coefficients are in good agreement with experiment and provide further validation on the role of Auger recombination in the efficiency reduction. Polarization fields and phase-space filling negatively impact device efficiency because they increase the operating carrier density at a given current density and increase the fraction of carriers lost to Auger recombination.