Effects of assisting and sputtering ion current on ion beam assisted deposition textured yttria stabilized zirconia buffer layers of coated conductors
Effects of assisting and sputtering ion current on ion beam assisted deposition textured yttria stabilized zirconia buffer layers of coated conductors
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DOI：
10.1016/j.apsusc.2010.09.013
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发表时间：
2010-12
影响因子：
6.7
通讯作者：
Zhi Wang;F. Feng;Zhi-Ping Zhao;B. Yan;Y. Li;Zhaotan Jiang;Honglin Chen;K. Shi;Z. Han
中科院分区：
文献类型：
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作者：
Zhi Wang;F. Feng;Zhi-Ping Zhao;B. Yan;Y. Li;Zhaotan Jiang;Honglin Chen;K. Shi;Z. Han
采用离子束辅助沉积法在未织构的哈氏合金衬底上制备了双轴织构氧化钇稳定氧化锆（001）薄膜。研究了辅助束流密度J_a和溅射束流密度J_a对薄膜织构的影响。结果表明，随着J_s或J_s的增加，面外织构和面内织构都先得到改善，然后逐渐退化。这一结果可归因于各向异性损伤和辅助离子的选择性溅射效应。在相同的离子-原子到达比r（用Ja/Js值反映）下，较低的沉积速率可以增强双轴织构。
Biaxially textured yttria stabilized zirconia (001) thin films were fabricated on untextured hastelloy substrates by ion beam assisted deposition method. The effects of assisting beam current density Jaand sputtering beam current density Json the textures of the films were studied. The results indicate that as Jaor Jsincrease, both the out-of-plane and the in-plane textures are improved initially, and then degrade. The results can be attributed to anisotropic damage and selective sputtering effect of assisting ions. At the same ion-to-atom arrival ratio r, which is reflected with Ja/Jsvalue, lower deposition rate can enhance the biaxial texture.