A vacuum field effect transistor using silicon field emitter arrays
A vacuum field effect transistor using silicon field emitter arrays
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使用硅场发射体阵列的真空场效应晶体管
DOI：
10.1109/iedm.1986.191310
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发表时间：
1986
期刊：
影响因子：
--
通讯作者：
R. Greene
中科院分区：
文献类型：
--
作者：
H. Gray;G. Campisi;R. Greene
在本文中，我们将介绍从第一个平面硅场发射阵列真空“场效应晶体管”的结果。这种新的器件结构用真空代替了标准硅FET的固体沟道区。“源”由一个微米尺寸的硅场致发射体阵列组成，载流子从该阵列注入“通道”真空区域。这种新器件结构的栅极调制产生了电压和功率增益。
In this paper we will present results taken from the first planar silicon field emitter array vacuum "field effect transistor". This new device structure replaces the solid channel region of a standard silicon FET with the vacuum. The "source" consists of an array of micron size silicon field emitters from which carriers are injected into the "channel" vacuum region. Gate modulation of this new device structure has produced both voltage and power gain.