Energetics of microvoid formation in Si from supersaturated vacancies
Energetics of microvoid formation in Si from supersaturated vacancies
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硅中过饱和空位微孔形成的能量学
DOI：
10.1063/1.114465
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发表时间：
1995
影响因子：
4
通讯作者：
W. Tiller
中科院分区：
文献类型：
--
作者：
N. Cuendet;T. Halicioǧlu;W. Tiller
利用Tersoff型经验势能函数，计算了含1~57个空位的硅中微空位的形成自由能随温度和空位过饱和度的变化。这一结果同样适用于晶体生长过程中的微孔成核，或者在低温下离子注入的结果。结果表明，对于晶体生长来说，均匀成核是不太可能的，而非均相成核很可能是通过吸附到微孔表面的非均相成核过程。
Using a Tersoff‐type empirical potential energy function, the free energy of formation for microvoids in silicon containing from 1 to 57 vacancies was calculated as a function of temperature and vacancy supersaturation. The results apply equally well to microvoid nucleation during crystal growth or, at low temperatures, as a consequence of ion implantation. The results indicate that homogeneous nucleation is an unlikely process for the crystal growth case where heterogeneous nucleation via adsorbate attachment to the microvoid surface is a very likely process.