Correlation of crystalline defects with photoluminescence of InGaN layers
Correlation of crystalline defects with photoluminescence of InGaN layers
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DOI：
10.1063/1.3202409
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发表时间：
2009-08
影响因子：
4
通讯作者：
N. Faleev;B. Jampana;O. Jani;Hongbo Yu;R. Opila;I. Ferguson;C. Honsberg
中科院分区：
文献类型：
--
作者：
N. Faleev;B. Jampana;O. Jani;Hongbo Yu;R. Opila;I. Ferguson;C. Honsberg
我们报告了不同厚度的InGaN脱膜的x射线衍射结构研究，表明扩展晶体缺陷的类型和空间分布与层厚度有很强的依赖性。观察到样品的光致发光强度随厚度增加至200 nm而增加，厚度增加则减少，这一结果归因于在epillayer内产生位错环。物理性质与晶体完美性的相关性为InGaN太阳能电池的优化设计开辟了道路，控制InGaN薄膜中的类型和位错密度，这是实现InGaN高光电流产生的关键要求。
We report structural studies of InGaN epilayers of various thicknesses by x-ray diffraction, showing a strong dependence of the type and spatial distribution of extended crystalline defects on layer thickness. The photoluminescence intensity for the samples was observed to increase with thickness up to 200 nm and decrease for higher thicknesses, a result attributed to creation of dislocation loops within the epilayer. Correlation of physical properties with crystalline perfection open the way for optimized designs of InGaN solar cells, with controlled types and dislocation densities in the InGaN epilayers, a key requirement for realizing high photocurrent generation in InGaN.