Elaboration and characterization of transparent GdTaO4:Tb3+ thick films fabricated by sol–gel process
Elaboration and characterization of transparent GdTaO4:Tb3+ thick films fabricated by sol–gel process
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DOI：
10.1016/j.jallcom.2010.04.109
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发表时间：
2010-07
影响因子：
6.2
通讯作者：
M. Gu;Li-ping Zhu;Xiaolin Liu;Shi-ming Huang;Bo Liu;Chen Ni
中科院分区：
文献类型：
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作者：
M. Gu;Li-ping Zhu;Xiaolin Liu;Shi-ming Huang;Bo Liu;Chen Ni
采用溶胶-凝胶法成功地制备了透明的GdTaO_4：Tb ~（3+）多晶厚膜。薄膜的临界厚度为760 nm，表面光滑无裂纹。厚膜颗粒尺寸为25 nm，粉末颗粒尺寸超过微米。与厚膜荧光粉相比，粉末样品中TaO 4基团的电荷转移跃迁和Tb 3+中心的激发峰分别从223 nm移至215 nm和245 nm移至255 nm。较高的电荷转移能级表明粉末荧光粉中Ta-O键的共价性降低。4f-5d激发带的红移可能归因于Tb ~（3+）在薄膜荧光粉中的量子限制。GdTaO 4：Tb 3+厚膜和粉末荧光粉的衰减时间分别为0.79和1.02ms。
Transparent GdTaO4:Tb3+polycrystalline thick films have been successfully synthesized using sol–gel technique. The critical thickness of the film was 760nm and the surface was crack-free and smooth. The thick film particle size was 25nm and the powder particle size was over micron. In comparison with the thick film phosphors, the charge transfer transition of TaO4group and the excitation peak of Tb3+center shifted from 223 to 215nm and 245 to 255nm for powder sample, respectively. The higher energy level of the charge transfer indicated the decrease of the covalency of the Ta–O bond in the powder phosphor. The red shift of the 4f-5d excitation band might be attributed to the quantum confinement of Tb3+in the film phosphor. The decay times of GdTaO4:Tb3+thick film and powder phosphors were 0.79 and 1.02ms, respectively.