High-temperature diffusion of magnesium in dislocation-free silicon
High-temperature diffusion of magnesium in dislocation-free silicon
复制标题
镁在无位错硅中的高温扩散
DOI：
10.1134/s1063782617080292
复制
发表时间：
2017
期刊：
影响因子：
0.7
通讯作者：
L. Portsel
中科院分区：
文献类型：
--
作者：
V. Shuman;Y. Astrov;A. Lodygin;L. Portsel
在1000-1200°C温度范围内研究了镁对无位错单晶硅的扩散掺杂。掺杂方法采用传统的三明治法。在600-1200°C的扩展温度范围内，镁的扩散系数可用通用的阿克里尼乌斯曲线描述，并考虑了600-800°C的早期数据。相对较低的扩散输运活化能（1.83 eV）是杂质扩散的间隙机制的指示。
The diffusion doping of dislocation-free single-crystal silicon with magnesium is studied in the temperature range 1000–1200°C. The conventional sandwich method is used as the doping method. It is found that the diffusion coefficient of magnesium is described by a universal Arrhenius curve in the extended temperature range 600–1200°C, with data earlier obtained for the range 600–800°C taken into consideration. The relatively low activation energy of diffusion transport (1.83 eV) is indicative of the interstitial mechanism of impurity diffusion.