Dose and shape modification proximity effect correction for forward-scattering range scale features in electron beam lithography

Dose and shape modification proximity effect correction for forward-scattering range scale features in electron beam lithography
复制标题

电子束光刻中前向散射距离尺度特征的剂量和形状修改邻近效应校正

DOI:
10.1143/jjap.39.6827
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发表时间:
2000
期刊:
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)
影响因子:
--
通讯作者:
O. Kim
O. Kim
中科院分区:
--
文献类型:
--
作者:
E. Seo;O. Kim

文献摘要

被引文献

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提出了一种用于电子束曝光中前向散射距离尺度特征的剂量和形状修正邻近效应校正方法。现有的剂量修改PEC为尺寸大于2/spl α/或3/spl α/(/spl α/是前向散射范围参数)的特征提供了良好的结果。对于前向散射距离尺度特征,曝光对比度的值太小,无法描绘特征。为了描绘前向散射距离尺度特征,应通过使用形状修改来增加曝光对比度。在现有剂量和形状修改佩奇或混合佩奇的情况下,需要额外的计算耗时的反向散射校正,或者具有大特征的那些佩奇使得额外的反向散射校正不必要。因此,对于前向散射距离尺度特征,我们提出了一种剂量和形状修改PEC,其中不需要额外的计算耗时的后向散射校正。
We propose a dose and shape modification proximity effect correction (PEC) for forward-scattering range scale features in electron beam lithography (EBL). An existing dose modification PEC provides good results for the features of size larger than 2/spl alpha/ or 3/spl alpha/ (/spl alpha/ is forward-scattering range parameter). For the forward-scattering range scale features, exposure contrast has too small a value to delineate the features. To delineate the forward-scattering range scale features, the exposure contrast should be increased by using shape modification. In the case of existing dose and shape modification PECs or Hybrid PECs, additional computation time-consuming back-scatter correction is required, or those PECs with large features make additional back-scatter correction unnecessary. Accordingly, for forward-scattering range scale features, we propose a dose and shape modification PEC in which the additional computation time-consuming back-scatter correction is unnecessary.