Dose and shape modification proximity effect correction for forward-scattering range scale features in electron beam lithography
Dose and shape modification proximity effect correction for forward-scattering range scale features in electron beam lithography
复制标题
电子束光刻中前向散射距离尺度特征的剂量和形状修改邻近效应校正
DOI:
10.1143/jjap.39.6827
复制
发表时间:
2000
期刊:
影响因子:
--
通讯作者:
O. Kim
中科院分区:
文献类型:
--
作者:
E. Seo;O. Kim
We propose a dose and shape modification proximity effect correction (PEC) for forward-scattering range scale features in electron beam lithography (EBL). An existing dose modification PEC provides good results for the features of size larger than 2/spl alpha/ or 3/spl alpha/ (/spl alpha/ is forward-scattering range parameter). For the forward-scattering range scale features, exposure contrast has too small a value to delineate the features. To delineate the forward-scattering range scale features, the exposure contrast should be increased by using shape modification. In the case of existing dose and shape modification PECs or Hybrid PECs, additional computation time-consuming back-scatter correction is required, or those PECs with large features make additional back-scatter correction unnecessary. Accordingly, for forward-scattering range scale features, we propose a dose and shape modification PEC in which the additional computation time-consuming back-scatter correction is unnecessary.