Advancing Semiconductor Manufacturing through DNA- Templated Lithography and Molecular-Scale Patterning of 2D Materials
Advancing Semiconductor Manufacturing through DNA- Templated Lithography and Molecular-Scale Patterning of 2D Materials
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DOI：
10.1109/wmed61554.2024.10534135
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发表时间：
2024-03
期刊：
影响因子：
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通讯作者：
Anumita Kumari;Michael Curtis;Arpan De-;Haitao Liu-;David Estrada;M. P. Anantram
中科院分区：
文献类型：
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作者：
Anumita Kumari;Michael Curtis;Arpan De-;Haitao Liu-;David Estrada;M. P. Anantram
本文探讨了利用DNA纳米结构对二硫化钼（MoS2）进行图案化在纳米电子学中的潜在应用。我们开发了一种具有最小面外生长和低缺陷密度的二硫化钼气相合成方法。我们利用密度泛函理论（DFT）计算研究了DNA反离子扩散对MoS2的带隙调制，强调了锂嵌入过程中的电子转移机制。最后，我们展示了DNA三角形和纳米管在各种二硫化钼表面的沉积。与之前的结果相反，我们发现这些DNA纳米结构保持了结构稳定性。这些发现共同为利用DNA纳米技术推进二维电子学提供了宝贵的见解。
This paper explores the potential of using DNA nanostructure to pattern molybdenum disulfide (MoS2) for potential applications in nanoelectronics. We developed a gas phase synthesis of MoS2 with minimal out-of-plane growth and low defect density. We used density functional theory (DFT) calculation to examine the bandgap modulation of MoS2 due to counterion diffusion from DNA, highlighting the electron transfer mechanism during lithium intercalation. Lastly, we demonstrate deposition of DNA triangles and nanotubes on various MoS2 surfaces. Contrary to previous results, we found that these DNA nanostructures maintained their structural stability. These findings collectively contribute valuable insights into using DNA nanotechnology to advance 2D electronics.