Promising Sb2(S,Se)3 Solar Cells with High Open Voltage by Application of a TiO2/CdS Double Buffer Layer
Promising Sb2(S,Se)3 Solar Cells with High Open Voltage by Application of a TiO2/CdS Double Buffer Layer
复制标题
采用 TiO2/CdS 双缓冲层的高开路电压 Sb2(S,Se)3 太阳能电池
DOI：
10.1002/solr.201800208
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发表时间：
2018-11-01
期刊：
影响因子：
7.9
通讯作者：
Zhang, Yi
中科院分区：
文献类型：
--
作者：
Wang, Weihuang;Wang, Xiaomin;Zhang, Yi
Sb-2(S,Se)(3) has gathered a lot of attention recently as a promising alternative absorber material. However, the efficiencies of Sb-2(S,Se)(3) devices are seriously restricted by the low open circuit voltage (V-oc). In this work, Sb-2(S,Se)(3) devices equipped with a TiO2/CdS double buffer layer are prepared by a hydro-thermal method, which aims to overcome the V-oc deficit. The obtained average V-oc of the devices is 785 mV and the champion efficiency of 5.73% is also achieved with a highest V-oc = 792 mV, Jsc = 12.03 mA cm(-2), FF = 60.9%. The improvement of V-oc is benefited from the reduced band gap offset after application of the double buffer layer. The non-encapsulated device could keep an average power conversion efficiency of 5.69% after being stored in ambient air over a month. This indicates the great potential of a double buffer layer in new chalcogenide photovoltaic devices.
