Temperature-dependent screening of the edge state around antidots in the quantum Hall regime.
Temperature-dependent screening of the edge state around antidots in the quantum Hall regime.
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DOI：
10.1103/physrevlett.102.086802
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发表时间：
2008-10
影响因子：
8.6
通讯作者：
Masanori Kato;A. Endo;S. Katsumoto;Y. Iye
中科院分区：
文献类型：
--
作者：
Masanori Kato;A. Endo;S. Katsumoto;Y. Iye
在量子霍尔体系中研究了大纵横比反点小阵列中的Aharonov-Bohm效应。磁场中Aharonov-Bohm振荡随温度的变化与栅极电压（B-V_{g}）平面的关系揭示了屏蔽的温度依赖性。观察到围绕反点的可压缩带的自一致筛选势随着温度的升高而逐渐获得更陡的斜率。
The Aharonov-Bohm effect in a small array of antidots with a large aspect ratio is investigated in the quantum Hall regime. The evolution with temperature of the Aharonov-Bohm oscillations in the magnetic field versus gate voltage (B-V_{g}) plane reveals the temperature dependence of the screening. The self-consistently screened potential of the compressible band surrounding an antidot is observed to gain a progressively steeper slope with increasing temperature.