Conductivity-limiting bipolar thermal conductivity in semiconductors.
Conductivity-limiting bipolar thermal conductivity in semiconductors.
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DOI：
10.1038/srep10136
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发表时间：
2015-05-13
影响因子：
4.6
通讯作者：
Tang X
中科院分区：
文献类型：
--
作者：
Wang S;Yang J;Toll T;Yang J;Zhang W;Tang X
有趣的实验结果提出了一个问题的基本机制，电子-空穴耦合诱导的双极半导体热传导。我们结合的理论分析和实验测量表明，在半导体双极热输运一般是一个“电导率限制”的现象，因此，它是由载流子迁移率比和少数载流子的部分电导率的本征和非本征的情况下，分别控制。我们的数值方法量化的电子能带结构和载流子散射机制的作用。我们已经成功地证明了通过电子能带结构调制和/或优先少数载流子散射在掺杂半导体中的双极热导率降低。我们希望这项研究是有益的，目前的利益，在优化窄禁带半导体的热电性能。
Intriguing experimental results raised the question about the fundamental mechanisms governing the electron-hole coupling induced bipolar thermal conduction in semiconductors. Our combined theoretical analysis and experimental measurements show that in semiconductors bipolar thermal transport is in general a “conductivity-limiting” phenomenon, and it is thus controlled by the carrier mobility ratio and by the minority carrier partial electrical conductivity for the intrinsic and extrinsic cases, respectively. Our numerical method quantifies the role of electronic band structure and carrier scattering mechanisms. We have successfully demonstrated bipolar thermal conductivity reduction in doped semiconductors via electronic band structure modulation and/or preferential minority carrier scatterings. We expect this study to be beneficial to the current interests in optimizing thermoelectric properties of narrow gap semiconductors.