n-Type field-effect transistors made of an individual nitrogen-doped multiwalled carbon nanotube
n-Type field-effect transistors made of an individual nitrogen-doped multiwalled carbon nanotube
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DOI：
10.1021/ja042554y
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发表时间：
2005-06-22
影响因子：
15
通讯作者：
Zhu, DB
中科院分区：
文献类型：
--
作者：
Xiao, K;Liu, YQ;Zhu, DB
我们报道了基于单个多壁氮掺杂碳纳米管的场效应晶体管的制备和表征。我们的测量表明，N掺杂的碳纳米管具有n型性质。文中还详细研究了该管与铂电极的接触特性。双端输运实验的温度依赖关系表明，输运主要由热离子发射和通过0.2 eV肖特基接触势垒的隧道效应主导。
We report on the fabrication and characterization of field-effect transistor based on an individual multiwalled nitrogen-doped carbon nanotube. Our measurements show that the N-doped carbon nanotubes have n-type properties. The contact properties of the tube and Pt electrodes are also studied in detail. Temperature dependence of two-terminal transport experiments suggests that transport is dominated by thermionic emission and tunneling through a 0.2 eV Schottky contact barrier.