Ultraviolet light emission from oxidized porous silicon
Ultraviolet light emission from oxidized porous silicon
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DOI：
10.1016/0038-1098(95)00650-8
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发表时间：
1996-01-01
影响因子：
2.1
通讯作者：
Qin, GG
中科院分区：
文献类型：
--
作者：
Lin, J;Yao, GQ;Qin, GG
在高温氧化的多孔硅（PS）样品中观察到波长为360-370 nm的紫外光发射。紫外光的强度而不是峰值位置随阳极氧化条件和氧化温度而变化。氮气中的热处理和1150 ℃的氧化都可以严重降低紫外光的强度，但后者的效果比前者强。结果表明，纳米硅颗粒及其表面氧化硅层中的发光中心对PS的紫外光发射起着关键作用。
Ultraviolet light emission with wavelength of 360-370 nm has been observed from porous silicon ( PS) samples properly oxidized at high temperature. The intensity rather than the peak location of ultraviolet light varies with anodization conditions and the oxidation temperature. Both thermal treatment in nitrogen and oxidation at 1150 degrees C can severely reduce the intensity of ultraviolet light, but the effect of the latter is stronger than that of the former. It is concluded that both the nanoscale silicon particles and the luminescence centers in Si oxide layers covering them play the key role in the ultraviolet light emission from PS.