Observation of Single Electron Tunneling and Ballistic Transport in Twin Silicon Nanowire MOSFETs (TSNWFETs) Fabricated by Top-Down CMOS Process
Observation of Single Electron Tunneling and Ballistic Transport in Twin Silicon Nanowire MOSFETs (TSNWFETs) Fabricated by Top-Down CMOS Process
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通过自上而下 CMOS 工艺制造的双硅纳米线 MOSFET (TSNWFET) 中单电子隧道和弹道传输的观察
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发表时间：
2006
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通讯作者：
B. Ryu
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作者：
K. Cho;S. Suk;Y. Yeoh;Ming Li;K. Yeo;Dong;S. Hwang;Donggun Park;B. Ryu
本文报道了采用自顶向下CMOS工艺制备栅极全能（GAA） tsnwfet的输运实验。栅极长度为45 nm的纳米线表现出单电子隧穿现象，从测量数据中提取的总电容与理想圆柱体的自电容基本一致。栅极长度为125 nm的纳米线表现出电导量子化，表明存在弹道输运。电导阶跃的温度依赖性与从经典到弹道的交叉是一致的
the authors report transport experiments on gate-all-around (GAA) TSNWFETs fabricated by top-down CMOS processes. The nanowire with 45 nm gate length exhibits single electron tunneling, and the total capacitance extracted from the measured data is in good agreement with the self-capacitance of an ideal cylinder. The nanowire with 125 nm gate length shows conductance quantization suggesting ballistic transport. The temperature dependence of the conductance steps is consistent with the crossover from classical to ballistic