Extremely large magnetization and Gilbert damping modulation in NiFe/GeBi bilayers
Extremely large magnetization and Gilbert damping modulation in NiFe/GeBi bilayers
复制标题
NiFe/GeBi 双层中的极大磁化强度和吉尔伯特阻尼调制
DOI：
10.1021/acsaelm.9b00735
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发表时间：
2020
影响因子：
4.7
通讯作者：
Huaiwu Zhang
中科院分区：
文献类型：
--
作者：
Dainan Zhang;Mingming Li;Lichuan Jin;Chenguang Li;Yiheng Rao;Xiaoli Tang;Huaiwu Zhang
我们制备了NiFe/GeBi异质结构，并研究了自旋抽运效应。GeBi半导体薄膜对GeBi/NiFe结构的磁化强度有显著影响，这可能是由于Bi离子的强自旋-轨道耦合作用影响了NiFe的转矩取向。当在膜结构（GeBi/Cu/NiFe）中插入纳米厚Cu膜时，由于Cu隔离了GeBi和NiFe层之间的耦合，新膜的矫顽力降低，饱和磁化强度增加。铁磁共振（FMR）测量结果表明，与GeBi/Cu/NiFe薄膜相比，GeBi/Cu/NiFe异质结构的Gilbert阻尼和共振场减小。这一工作表明，GeBi可以显著地调节磁化强度和吉尔伯特阻尼常数。
We have fabricated NiFe/GeBi heterostructures and investigated the spin pumping effect. The GeBi semiconductor film had a remarkable impact of the magnetization of the GeBi/NiFe structure, which may have been caused by the strong spin-orbit coupling of the Bi ions that can affect the torque orientation of NiFe. When a nanometer thick Cu film was inserted in the film structure (GeBi/Cu/NiFe), the coercive force of the new film decreased and the saturation magnetization increased because Cu isolated the coupling between the GeBi and NiFe layers. Ferromagnetic resonance (FMR) measurements showed that the GeBi/Cu/NiFe heterostructure had a reduced Gilbert damping and resonance field , when compared with those of the GeBi/NiFe thin film. This work indicated that the GeBi could be used for adjusting both the magnetization and Gilbert damping constant dramatically.