Energy band engineering and controlled p-type conductivity of CuAlO2 thin films by nonisovalent Cu-O alloying
Energy band engineering and controlled p-type conductivity of CuAlO2 thin films by nonisovalent Cu-O alloying
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DOI：
10.1063/1.3683499
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发表时间：
2012-02-06
影响因子：
4
通讯作者：
Jiang, X.
中科院分区：
文献类型：
--
作者：
Yao, Z. Q.;He, B.;Jiang, X.
通过非等价Cu-O与CuAlO 2主体合金化，通过能带偏移和价带顶Cu 2 + 3d（9）轨道部分取代低色散Cu+ 3d（10）轨道的协同效应，改善了CuAlO 2薄膜的电子能带结构和p型导电性. Cu-O/CuAlO 2合金薄膜显示出优异的电子性能，具有可调的宽直接带隙（类似于3.46-3.87 eV）;霍尔测量证实了迄今为止CuAlO 2薄膜和晶体的最高空穴迁移率（类似于11.3-39.5 cm（2）/Vs）。提出了在p-CuAlO 2膜上构造的顶栅薄膜晶体管，并且该器件显示出显著的性能，I-on/I-off接近8.0 x 10（2），场效应迁移率为0.97 cm（2）/Vs。（C）2012美国物理研究所。[doi：10.1063/1.3683499]
The electronic band structure and p-type conductivity of CuAlO2 films were modified via synergistic effects of energy band offset and partial substitution of less-dispersive Cu+ 3d(10) with Cu2+ 3d(9) orbitals in the valence band maximum by alloying nonisovalent Cu-O with CuAlO2 host. The Cu-O/CuAlO2 alloying films show excellent electronic properties with tunable wide direct bandgaps (similar to 3.46-3.87 eV); Hall measurements verify the highest hole mobilities (similar to 11.3-39.5 cm(2)/Vs) achieved thus far for CuAlO2 thin films and crystals. Top-gate thin film transistors constructed on p-CuAlO2 films were presented, and the devices showed pronounced performance with I-on/I-off of similar to 8.0 x 10(2) and field effect mobility of 0.97 cm(2)/Vs. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3683499]