Domain Engineering for Enhanced Ferroelectric Properties of Epitaxial (001) BiFeO Thin Films
Domain Engineering for Enhanced Ferroelectric Properties of Epitaxial (001) BiFeO Thin Films
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DOI：
10.1002/adma.200800823
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发表时间：
2009-02-16
影响因子：
29.4
通讯作者：
Eom, Chang-Beom
中科院分区：
文献类型：
--
作者：
Jang, Ho Won;Ortiz, Daniel;Eom, Chang-Beom
在（001）SrTiO3衬底上的BiFeO3薄膜中的两种不同的条纹畴表现出方形的、完整的铁电开关和低漏电流。BiFeO3单胞的择优畸变和衬底各向异性引起的持续台阶流生长是（001）BiFeO3薄膜中两种不同条纹畴形成的原因。
Two-variant stripe domains in BiFeO3 films on miscut (001) SrTiO3 substrates exhibit squarelike, complete ferroelectric switching with low leakage current. Both the preferential distortion of BiFeO3 unit cells and the persistent step-flow growth induced by the substrate anisotropy are the origins of the formation of the twovariant stripe domains in (001) BiFeO3 films.