Heusler interfaces—Opportunities beyond spintronics?
Heusler interfaces—Opportunities beyond spintronics?
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DOI：
10.1063/1.5099576
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发表时间：
2019-07
期刊：
影响因子：
6.1
通讯作者：
J. Kawasaki
中科院分区：
文献类型：
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作者：
J. Kawasaki
Heusler化合物，在立方和六方的多晶态中，表现出显著的电子、磁性、弹性和拓扑性质，与过渡金属氧化物相媲美。迄今为止，对这些量子材料的研究主要集中在体磁和热电性质或自旋电子学的应用上。然而，更广泛地说，Heuslers提供了一个平台，可以在定义良好的晶体界面上发现和操纵突现特性。在这里，受层状Heusler异质结构外延生长进展的激励，我提出了Heusler界面的愿景，重点关注自旋电子学之外的前沿和挑战。在技术上重要的半导体衬底（如砷化镓、锗和硅）上外延生长这些材料的能力，为它们与现代电子产品的集成提供了直接途径。进一步的进展将需要新的方法来控制化学计量和“电子级”质量的缺陷，并在原子尺度上控制界面的突然性和有序性。
Heusler compounds, in both cubic and hexagonal polymorphs, exhibit a remarkable range of electronic, magnetic, elastic, and topological properties, rivaling that of the transition metal oxides. To date, research on these quantum materials has focused primarily on bulk magnetic and thermoelectric properties or on applications in spintronics. More broadly, however, Heuslers provide a platform for discovery and manipulation of emergent properties at well-defined crystalline interfaces. Here, motivated by advances in the epitaxial growth of layered Heusler heterostructures, I present a vision for Heusler interfaces, focusing on the frontiers and challenges that lie beyond spintronics. The ability to grow these materials epitaxially on technologically important semiconductor substrates, such as GaAs, Ge, and Si, provides a direct path for their integration with modern electronics. Further advances will require new methods to control the stoichiometry and defects to “electronic grade” quality and to control the interface abruptness and ordering at the atomic scale.