Photonic p-n junction: An ideal near-field heat flux modulator
Photonic p-n junction: An ideal near-field heat flux modulator
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DOI：
10.1103/physrevb.106.l121403
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发表时间：
2022-05
影响因子：
3.7
通讯作者：
Deyu Xu;Junming Zhao;Linhua Liu
中科院分区：
文献类型：
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作者：
Deyu Xu;Junming Zhao;Linhua Liu
利用一对由纳米级真空间隙隔开的 p 型和 n 型半导体，我们引入了一种光电元件原型“光子 p-n 结”，作为电子 p-n 结的模拟，它被证明可以作为理想的近场热通量调制器。高调制性能依赖于可调偏压下表面附近空穴和电子密度变化引起的三种基本光子-载流子相互作用模式（即表面等离子体激元、对称耗尽内部等离子体激元和对称累积表面等离子体激元）之间的切换。该原型不仅为纳米级非接触式热管理提供了新思路，还为处理等离子体激元携带的信息的光电子器件设计提供了新思路。
Using a pair of p - and n -type semiconductors separated by a nanoscale vacuum gap, we introduce an optoelectronics element prototype, “photonic p - n junction”, as an analogue of the electronic p - n junction, which is demonstrated to serve as an ideal near-field heat flux modulator. The high modulation performance relies on the switch among three fundamental photon-carrier interaction modes (i.e., surface plasmon polaritons, symmetric depleted internal plasmon polaritons and symmetric accumulated surface plasmon polaritons) caused by the changes in hole and electron densities near the surfaces under a tunable bias. This prototype offers new thoughts not only for contactless thermal management at nanoscale but also for design of optoelectronics devices processing information carried by plasmon polaritons.