Relation between gaseous radicals and μc-Si film property in SiH4/H2 plasma CVD
Relation between gaseous radicals and μc-Si film property in SiH4/H2 plasma CVD
复制标题
SiH4/H2等离子体CVD中气态自由基与μc-Si薄膜性能的关系
DOI:
--
复制
发表时间:
2013
期刊:
影响因子:
--
通讯作者:
M. Hori
中科院分区:
文献类型:
--
作者:
A. Fukushima;Y. Lu;Y. Abe;K. Takeda;H. Kondo;K. Ishikawa;M. Sekine;M. Hori