Analytical Drain Current Model of 1-D Ballistic Schottky-Barrier Transistors
Analytical Drain Current Model of 1-D Ballistic Schottky-Barrier Transistors
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DOI：
10.1109/ted.2017.2721540
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发表时间：
2017-03
影响因子：
3.1
通讯作者：
I. Bejenari;M. Schröter;M. Claus
中科院分区：
文献类型：
--
作者：
I. Bejenari;M. Schröter;M. Claus
基于wentzel - kramer - brillouin近似，建立了具有肖特基垒触点的类mosfet一维弹道晶体管漏极电流的解析模型。通过对费米-狄拉克分布函数和传输概率的适当逼近，得到了Landauer积分的解析解，克服了现有模型的局限性，扩展了其对模拟应用所需的高偏压的适用性。模拟结果与10 nm以下碳纳米管场效应管的实验数据吻合较好。
A new analytical model based on the Wentzel–Kramers–Brillouin approximation for MOSFET-like 1-D ballistic transistors with Schottky-Barrier contacts has been developed for the drain current. By using a proper approximation of both the Fermi–Dirac distribution function and transmission probability, an analytical solution for the Landauer integral was obtained, which overcomes the limitations of existing models and extends their applicability toward high bias voltages needed for analog applications. The simulations of transfer and output characteristics are found to be in agreement with the experimental data for sub-10-nm carbon-nanotube FETs.