Chemical Vapor Deposition of Transparent, p-Type Cuprous Bromide Thin Films
Chemical Vapor Deposition of Transparent, p-Type Cuprous Bromide Thin Films
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DOI：
10.1021/acs.chemmater.0c04586
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发表时间：
2021-02-09
影响因子：
8.6
通讯作者：
Gordon, Roy G.
中科院分区：
文献类型：
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作者：
Chang, Christina M.;Davis, Luke M.;Gordon, Roy G.
半导体 CuX（X = Cl、Br 或 I）是高迁移率 p 型透明导体，有望用于钙钛矿光伏等薄膜光电器件。这些设备需要光滑、无针孔的薄膜，厚度为数十纳米，但在数十厘米范围内均匀。化学气相沉积 (CVD) 是一种成熟且可扩展的工艺，可以在如此大的面积上提供出色的吞吐量、共形性和均匀性。然而，现有的 CVD 方法无法生产任何卤化亚铜的连续薄膜。我们建立了这样一种方法，通过HBr气体与乙烯基三甲基硅烷(六氟乙酰丙酮)铜(I)反应制备CuBr薄膜。我们的方法不仅提供了所需的器件质量薄膜，而且还开辟了其他金属卤化物 CVD 通用途径的可能性。
The semiconductors CuX (X = Cl, Br, or I) are highmobility p-type transparent conductors, promising for use in thin film optoelectronic devices such as perovskite photovoltaics. These devices require smooth, pinhole free films that are tens of nanometers thick but uniform across tens of centimeters. Chemical vapor deposition (CVD), an established and scalable process, can provide excellent throughput, conformality, and uniformity on such large areas. However, no prior CVD method could produce continuous thin films of any cuprous halide. We have established such a method, preparing CuBr thin films by reaction between HBr gas and vinyltrimethylsilane(hexafluoroacetylacetonato)copper(I). Our method not only provides the desired device-quality films but also opens up the possibility of a general route to CVD of other metal halides.