Preparation of Ba-ferrite films for perpendicular magnetic recording by RF targets facing type of sputtering
Preparation of Ba-ferrite films for perpendicular magnetic recording by RF targets facing type of sputtering
复制标题
面向溅射射频靶材制备垂直磁记录用Ba铁氧体薄膜
DOI：
10.1109/tmag.1984.1063361
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发表时间：
1984
影响因子：
2.1
通讯作者：
S. Yamanaka
中科院分区：
文献类型：
--
作者：
M. Matsuoka;Y. Hoshi;M. Naoe;S. Yamanaka
采用射频靶向式溅射（rf-TFTS）装置，以高速率存款了具有c轴取向的六方磁铅石型钡铁氧体（BaO.6Fe2O3：BaM）薄膜。虽然BaM的高速率溅射在rf-TFTS中在稳定条件下是可能的，但是在溅射期间，膜组合物随着总气压P总和输入功率P av而急剧变化。这些变化对应的薄膜组成的变化，以及在等离子体和壁之间的电位差Vd，即，在薄膜中的Ba含量的不足增加，随着Vd的增加。这些结果表明组成的变化是由溅射过程中衬底的离子轰击引起的（即，由于等离子体中的离子能以约e.V. d .的能量轰击衬底，Vd值随Ptotal或Pav的增大而减小，在高Ptotal或Pav条件下可获得化学计量比的BaM薄膜。因此，溅射必须在高溅射功率或高溅射气体压力的条件下进行，其中Vd变小，以沉积存款化学计量的BaM膜。
A rf Targets Facing Type of Sputtering(rf-TFTS) apparatus was used to deposit hexagonal magnetoplumbite type of Ba ferrite (BaO.6Fe 2 O 3 : BaM) films with c-axis orientation at high rate. Although high rate sputtering of BaM was possible under stable conditions in rf-TFTS, the film composition changed drastically with total gas pressure P total and input power P av during sputtering. These changes in film composition corresponded well to the change in the potential difference Vd between plasma and wall, that is, the deficiency in Ba content in the films increased as V d increased. These results indicate that the change in composition is caused by ion bombardment of the substrate during sputtering (i.e., Ba atom is resputtered preferencially), since the ions in plasma can bombard the substrate with energy about e.V d . The value of V d decreases as P total or P av increases and the BaM films with stoichiometric composition were obtained at high P total or at high P av . Therefore, sputtering must be performed under the condition of high sputtering power or of high sputtering gas pressure, where V d becomes small, to deposit stoichiometric BaM films.