Fabrication of GaInNAs-based Solar Cells for Application to Multi-junction Tandem Solar Cells
Fabrication of GaInNAs-based Solar Cells for Application to Multi-junction Tandem Solar Cells
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用于多结串联太阳能电池的基于 GaInNAs 的太阳能电池的制造
DOI：
10.1109/wcpec.2006.279595
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
M. Yamaguchi
中科院分区：
文献类型：
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作者：
N. Miyashita;Y. Shimizu;N. Kobayashi;Y. Okada;M. Yamaguchi
研究了不同本征层厚度的p-</sub>In<sub>0.03</sub>N<sub>0.01</sub>As<sub>0.99</sub>/i-n-Ga<0.97 MOS异质结太阳电池的特性。采用氢原子辅助射频分子束外延技术在GaAs(001)衬底上制备了太阳能电池。在优化的I层厚度为600 nm时，获得了~gt；80%的最大量子效率，n-Ga<sub>0.97</sub>In<sub>0.03</sub>N<sub>0.01</sub>As<sub>0.99</sub>薄膜中的空穴扩散长度为~160 nm。在此基础上，制作了第一块同质结GaInNAs太阳电池，短路电流密度达到14.2 mA/cm
We have investigated the characteristics of p-GaAs/i-n-Ga<sub>0.97 </sub>In<sub>0.03</sub>N<sub>0.01</sub>As<sub>0.99</sub> heterojunction solar cells with different intrinsic layer thickness. The solar cells studied in this study were fabricated by atomic hydrogen-assisted RF-MBE on GaAs(001) substrates. With an optimized i-layer thickness of 600nm, maximum quantum efficiency of > 80% has been obtained, and the hole diffusion length in n-Ga<sub>0.97</sub>In<sub>0.03</sub>N<sub>0.01</sub>As<sub>0.99</sub> film was ~160nm. Then we fabricated our first homojunction GaInNAs solar cells, and short-circuit current density of 14.2 mA/cm<sup>2</sup> has been achieved