Efficiency of GaInAs thermophotovoltaic cells: the effects of incident radiation, light trapping and recombinations.
Efficiency of GaInAs thermophotovoltaic cells: the effects of incident radiation, light trapping and recombinations.
复制标题
GaInAs 热光伏电池的效率：入射辐射、光捕获和复合的影响。
作者：
P. Jurczak;A. Onno;K. Sablon;Huiyun Liu
基于推广到半导体的黑体理论和电池内的流动平衡建立的辐射极限模型适用于作为热光电器件的Ga(X)In(1-x)。研究了热发射极温度和入射功率密度对不同Ga/In比电池性能的影响。此外，还研究了电池厚度和光陷阱的影响。对于带隙为0.43 eV、温度为1800K的无位错5-μm厚电池，理论上计算的最大效率为24.2%。该模型还考虑了俄歇复合和穿线位错相关的Shockley-Read-Hall复合。
The radiative limit model, based on the black body theory extended to semiconductors and the flow equilibrium in the cell, has been adapted for Ga(x)In(1-x)As thermophotovoltaic devices. The impact of the thermal emitter temperature and the incident power density on the performance of cells for different Ga/In ratios has been investigated. The effects of the thickness of the cell and of light trapping have been investigated as well. A theoretical maximum efficiency of 24.2% has been calculated for a dislocation-free 5-μm-thick cell with a 0.43 eV bandgap illuminated by a source at 1800 K. The model also takes into account Auger recombinations and threading dislocations-related Shockley-Read-Hall recombinations.