Inversion Electron Mobility Affected by Phase Separation in High-Permittivity Gate Dielectrics
Inversion Electron Mobility Affected by Phase Separation in High-Permittivity Gate Dielectrics
复制标题
高介电常数栅极电介质中相分离对反演电子迁移率的影响
DOI：
10.1143/jjap.42.l1425
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
S. Kimura
中科院分区：
文献类型：
--
作者：
S. Saito;Y. Matsui;K. Torii;Y. Shimamoto;M. Hiratani;S. Kimura
我们研究了相分离对具有高介电常数（高κ）栅极电介质的金属-绝缘体-半导体场效应晶体管的反转电子迁移率的影响。以硅酸铪薄膜的实验数据为基础，建立了含高介电常数晶粒的高κ膜在低介电常数非晶膜中的相分离模型。利用该模型，我们应用线性响应理论计算了电子迁移率，发现相分离导致电子迁移率显著降低。我们还讨论了相分离的硅酸铪和铝酸铪在计算电子迁移率上的差异。
We have examined the effects of phase separation on the inversion electron mobility of metal-insulator-semiconductor field-effect transistors with high-permittivity (high-κ) gate dielectrics. On the basis of experimental data of hafnium silicate films, we developed a phase separation model of a high-κ film that contains crystal grains of high permittivity in an amorphous film of low permittivity. Using this model, we calculated the electron mobility by applying a linear response theory and found that the phase separation results in a significant reduction of the electron mobility. We also discuss the differences in the calculated electron mobility between the phase-separated hafnium silicate and hafnium aluminate.