Differential Sputter Yields of Boron Nitride, Quartz, and Kapton Due to Low Energy Xe+ Bombardment (Preprint)
Differential Sputter Yields of Boron Nitride, Quartz, and Kapton Due to Low Energy Xe+ Bombardment (Preprint)
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低能 Xe 轰击导致氮化硼、石英和 Kapton 的不同溅射产率（预印本）
DOI：
10.2514/6.2007-5314
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
John D. Williams
中科院分区：
文献类型：
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作者：
A. Yalin;B. Rubin;S. Domingue;Zach Glueckert;John D. Williams
摘要：本文介绍了氮化硼、石英和开普顿在氙离子轰击下的微分溅射产额的测量结果。测量是使用基于石英晶体微天平(QCM)的溅射诊断进行的。QCM测量允许完全角分辨率，即差分溅射产额测量作为极角和方位角的函数来测量。给出了100、250、350和500 eV Xe+在0？、15？、30？而45岁呢？入射角。我们用两个自由参数：总溅射产额Y和特征能E*，用修正的张氏公式对测量曲线进行了拟合。总产量根据差异分布计算，并在可能的情况下与公布的值和重量损失值进行比较。
Abstract : In this contribution we present results of differential sputter yield measurements of boron nitride, quartz, and kapton due to bombardment by xenon ions. The measurements are made using a sputtering diagnostic based on a quartz crystal microbalance (QCM). The QCM measurement allows full angular resolution, i.e. differential sputtering yield measurements are measured as a function of both polar angle and azimuthal angle. Measured profiles are presented for 100, 250, 350 and 500 eV Xe+ bombardment at 0?, 15?, 30? and 45? angles of incidence. We fit the measured profiles with Modified Zhang expressions using two free parameters: the total sputter yield, Y, and characteristic energy E*. Total yields are calculated from the differential profiles and are compared with published values and weight loss values where possible.