Maximizing intrinsic anomalous Hall effect by controlling the Fermi level in simple Weyl semimetal films
Maximizing intrinsic anomalous Hall effect by controlling the Fermi level in simple Weyl semimetal films
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DOI：
10.1103/physrevb.105.l201101
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发表时间：
2022-04
影响因子：
3.7
通讯作者：
M. Ohno;S. Minami;Y. Nakazawa;Shin Sato;M. Kriener;R. Arita;M. Kawasaki;M. Uchida
中科院分区：
文献类型：
--
作者：
M. Ohno;S. Minami;Y. Nakazawa;Shin Sato;M. Kriener;R. Arita;M. Kawasaki;M. Uchida
起源于Berry曲率的大本征反常霍尔效应（AHE）已引起越来越多的关注，具有潜在的应用前景。最近提出的磁性Weyl半金属EuCd$_2$Sb$ {\ maththrm{2}}$为控制本态AHE提供了一个很好的平台，因为它只在费米能量附近具有Weyl点相关的能带结构。本文报道了EuCd$_2$Sb$_{\ maththrm{2}}$单晶薄膜的制备及其异常霍尔效应的薄膜控制。通过对能量依赖本征异常霍尔电导率的第一性原理计算分析，得到的异常霍尔效应随着载流子密度的变化呈现出一个尖峰，表明本征异常霍尔电导率具有明显的能量依赖性。
Large intrinsic anomalous Hall effect (AHE) originating in the Berry curvature has attracted growing attention for potential applications. Recently proposed magnetic Weyl semimetal EuCd$_2$Sb$_{\mathrm{2}}$ provides an excellent platform for controlling the intrinsic AHE because it only hosts a Weyl-points related band structure near the Fermi energy. Here we report the fabrication of EuCd$_2$Sb$_{\mathrm{2}}$ single-crystalline films and control of their anomalous Hall effect by film technique. As also analyzed by first-principles calculations of energy-dependent intrinsic anomalous Hall conductivity, the obtained anomalous Hall effect shows a sharp peak as a function of carrier density, demonstrating clear energy dependence of the intrinsic AHE.