Magnetic domain writing defined by electrical gating in Pt/Co film
Magnetic domain writing defined by electrical gating in Pt/Co film
复制标题
DOI：
10.1063/1.5078553
复制
发表时间：
2018-12
影响因子：
4
通讯作者：
F. Ando;M. Ishibashi;T. Koyama;Y. Shiota;T. Moriyama;D. Chiba;T. Ono
中科院分区：
文献类型：
--
作者：
F. Ando;M. Ishibashi;T. Koyama;Y. Shiota;T. Moriyama;D. Chiba;T. Ono
需要控制磁膜中期望位置处的磁特性以实现基本器件，诸如畴壁逻辑或磁振子应用。在这里，我们证明了在Pt/Co膜中的所需位置处的磁畴结构的形成，使用具有网状栅电极的电选通和扫描施加的磁场。由于可以通过调制Co层表面处的电子密度来改变磁特性，因此该方法原则上在诱导纳米级畴结构或构造易失性磁振子晶体中提供更高的速度和功率效率操作。例如畴壁逻辑或磁振子应用。在这里，我们证明了在Pt/Co膜中的所需位置处的磁畴结构的形成，使用具有网状栅电极的电选通和扫描施加的磁场。由于可以通过调制Co层的表面处的电子密度来改变磁特性，因此该方法原则上在诱导纳米级畴结构或在配置易失性磁振子晶体中提供更高的速度和功率效率操作。
There is a need to control magnetic properties at a desired location in a magnetic film towards a realization of fundamental devices, such as domain wall logic or magnonic applications. Here, we demonstrate the formation of a magnetic domain structure at a desired location in a Pt/Co film, using electrical gating with a meshed gate electrode and sweeping the applied magnetic field. As the magnetic properties can be changed by modulating the electron density at the surface of the Co layer, this method in principle provides higher speed and power-efficient operation in inducing a nanoscale domain structure or in configuring a volatile magnonic crystal.There is a need to control magnetic properties at a desired location in a magnetic film towards a realization of fundamental devices, such as domain wall logic or magnonic applications. Here, we demonstrate the formation of a magnetic domain structure at a desired location in a Pt/Co film, using electrical gating with a meshed gate electrode and sweeping the applied magnetic field. As the magnetic properties can be changed by modulating the electron density at the surface of the Co layer, this method in principle provides higher speed and power-efficient operation in inducing a nanoscale domain structure or in configuring a volatile magnonic crystal.