Spin-dependent recombination involving oxygen-vacancy complexes in silicon
Spin-dependent recombination involving oxygen-vacancy complexes in silicon
复制标题
硅中涉及氧空位复合物的自旋相关复合
DOI：
10.1103/physrevb.89.195207
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发表时间：
2014
影响因子：
3.7
通讯作者：
Martin S. Brandt
中科院分区：
文献类型：
--
作者：
David P. Franke;Felix Hoehne;Leonid S. Vlasenko;Kohei M. Itoh;Martin S. Brandt
用连续波和脉冲电探测磁共振研究了辐照直拉硅中自旋相关的弛豫和复合过程。两个过程涉及的SL 1中心，中性激发三重态的氧空位复合物，可以被分开的不同的动力学。其中一个过程是激发态SL 1弛豫到氧空位复合物的基态，另一个过程是P施主和SL 1中心形成紧密对的电荷转移，如电检测到的电子双共振所示。对于这两个过程中，复合动力学研究与脉冲EDMR技术。我们证明了真正的零场连续波和脉冲EDMR自旋1系统的可行性，并使用它来测量SL 1的不同自旋状态的寿命也在消失的外部磁场。
Spin-dependent relaxation and recombination processes in-irradiated-type Czochralski-grown silicon are studied using continuous wave (cw) and pulsed electrically detected magnetic resonance (EDMR). Two processes involving the SL1 center, the neutral excited triplet state of the oxygen-vacancy complex, are observed which can be separated by their different dynamics. One of the processes is the relaxation of the excited SL1 state to the ground state of the oxygen-vacancy complex, the other a charge transfer betweenP donors and SL1 centers forming close pairs, as indicated by electrically detected electron double resonance. For both processes, the recombination dynamics is studied with pulsed EDMR techniques. We demonstrate the feasibility of true zero-field cw and pulsed EDMR for spin-1 systems and use this to measure the lifetimes of the different spin states of SL1 also at vanishing external magnetic field.