Solar cells based on CuInSe2 and related compounds: Material and device properties and processing
Solar cells based on CuInSe2 and related compounds: Material and device properties and processing
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DOI：
10.1002/pip.4670030602
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发表时间：
1995-11-01
影响因子：
6.7
通讯作者：
Schock, HW
中科院分区：
文献类型：
--
作者：
Nadenau, V;Braunger, D;Schock, HW
本文总结了最近的材料和器件的结果，在物理电子学研究所在Sfrcttgart大学（IPE）。对材料系统Cu（In，Ga）（S，Se）（2）的性能进行了分析，并尽可能地在材料性能和器件特性之间建立相关性。本文介绍和比较了制备吸收体的不同高真空技术。共蒸发和至少一种顺序蒸发技术可以形成Cu（In，Ga）（S，Se）（2）族的不同合金。从共蒸发过程中已知的CuInSe 2的富Cu生长的模型也可以用于顺序蒸发过程中的富Cu生长。轻微的（In，Ga）丰富的块体组合物的表面成分总是被确定为缺陷黄铜矿Cu（In，Ga）（3）Se-5。用不同的工艺制备的太阳能电池，因此不同的形态产生相似的器件性能。从价带和导带的态密度的指数衰减。使用具有更高载流子浓度的吸收体层来实现改进的电池性能。载流子浓度可以通过使用含Na衬底或通过利用新的无Cd缓冲层来增加。使用无Cd缓冲层实现了15%范围内的器件效率。
This paper summarizes recent material and device results obtained at the Institute of physical Electronics at Sfrcttgart University (IPE). properties of the material system Cu(In, Ga)(S, Se)(2) were analysed,sed and wherever possible a correlation between the material properties and the device characteristics is made. Different high-vacuum techniques of absorber preparation ave presented and compared The formation of different alloys of the family Cu(In, Ga)(S, Se)(2) is possible for the co-evaporation and at least one of the sequential evaporation techniques. The model for Cu-rich growth of CuInSe2, known from the co-evaporation process can also be used for the Cu-rich growth in the sequential evaporation processes. The surface composition of slightly (In, Ga)-rich bulk compositions is always determined to be the defect chalcopyrite Cu(In, Ga)(3)Se-5. Solar cells prepared with different processes and therefore different morphologies yielded similar device performance. An exponential decay of the density of states from the valence and conduction bands was obtained. Improved cell performance is achieved using absorber layers with higher carrier concentrations. The carrier concentration can be increased by using Na-containing substrates or by utilizing a new Cd-free buffer layer. Device efficiencies in the range of 15% were achieved using the Cd-free buffer layer.