A 10-Gb/s OEIC with Meshed Spatially-Modulated Photo Detector in 0.18-$\mu{\hbox {m}}$ CMOS Technology
A 10-Gb/s OEIC with Meshed Spatially-Modulated Photo Detector in 0.18-$\mu{\hbox {m}}$ CMOS Technology
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DOI：
10.1109/jssc.2011.2116430
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发表时间：
2011-03
影响因子：
5.4
通讯作者：
Shih-Hao Huang;Wei-Zen Chen;Yu-Wei Chang;Yang-Tung Huang
中科院分区：
文献类型：
--
作者：
Shih-Hao Huang;Wei-Zen Chen;Yu-Wei Chang;Yang-Tung Huang
本文介绍了一种10 Gb/s全集成CMOS光接收机的设计，该接收机由一种新颖的空间调制光电探测器（SMPD）、一个低噪声跨阻放大器（TIA）和一个后限幅放大器组成。建议的网状SMPD的带宽可以提高到6.9 GHz下的反向偏置电压为14.2 V的测量响应度为29 mA/W的网状SMPD作为850 nm光源照射。针对片上CMOS光电探测器（PD）响应度较低的问题，提出了一种具有嵌套反馈和并联峰化的高增益TIA，以实现低噪声工作。该光接收机在驱动50 Ω输出负载时能够提供25 kΩ的转换增益。对于27- 1的PRBS测试图案，10-Gb/s光电集成电路（OEIC）在误码率（BER）为10 - 11时具有-6 dBm的光学灵敏度。采用通用0.18 μm CMOS工艺实现，芯片面积为0.95 mm × 0.8 mm。跨阻放大器、后置放大器和输出缓冲器的功耗分别为38 mW、80 mW和27 mW。
This paper describes the design of a 10-Gb/s fully integrated CMOS optical receiver, which consists of a novel spatially-modulated photo detector (SMPD), a low-noise trans-impedance amplifier (TIA), and a post-limiting amplifier on a single chip. The bandwidth of proposed meshed SMPD can be boosted up to 6.9 GHz under a reverse-biased voltage of 14.2 V. The measured responsivity of the meshed SMPD is 29 mA/W as illuminated by 850-nm light source. To compensate the relatively low responsivity of on-chip CMOS photo detector (PD), a high-gain TIA with nested feedback and shunt peaking is proposed to achieve low-noise operation. The optical receiver is capable of delivering 25-kΩ conversion gain when driving 50-Ω output loads. For a PRBS test pattern of 27- 1, the 10-Gb/s optoelectronic integrated circuit (OEIC) has optical sensitivity of - 6 dBm at a bit-error rate (BER) of 10 -11. Implemented in a generic 0.18-μm CMOS technology, the chip area is 0.95 mm by 0.8 mm. The trans-impedance amplifier, post amplifier, and output buffer respectively drain 38 mW, 80 mW, and 27 mW from the 1.8-V supply.