Total Dose Effects in Tunnel-Diode Body-Contact SOI $n$MOSFETs
Total Dose Effects in Tunnel-Diode Body-Contact SOI $n$MOSFETs
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DOI：
10.1109/tns.2014.2364923
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发表时间：
2014-11
影响因子：
1.8
通讯作者：
Jiexin Luo;Jing Chen;Z. Chai;K. Lu;Weiwei He;Yan Yang;E. Zhang;D. Fleetwood;Xi Wang
中科院分区：
文献类型：
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作者：
Jiexin Luo;Jing Chen;Z. Chai;K. Lu;Weiwei He;Yan Yang;E. Zhang;D. Fleetwood;Xi Wang
隧道-二极管体接触(TDBC)SOI MOSFET利用浅源极和深漏极来消除总电离剂量引起的背沟漏并抑制浮体效应。相反，在T栅体接触(Tb)SOI nMOSFET中观察到显著的泄漏电流，这是由于掩埋氧化物中的陷阱电荷的结果。TDBC SOI nMOSFET在辐照后出现亚阈值驼峰。浅槽隔离(STI)拐角处的电荷俘获是辐照后电流-电压特性出现驼峰的主要原因。Pocket p+注入减小了短沟道TDBC器件的亚阈值驼峰尺寸。
Tunnel-Diode Body-Contact (TDBC) SOI MOSFETs utilize a shallow source and a deep drain to eliminate total-ionizing-dose induced back-channel leakage and to suppress floating body effects. In contrast, significant leakage current is observed in T-gate Body-Contact (TB) SOI nMOSFETs, as a result of trapped charge in the buried oxide. A subthreshold hump is observed in TDBC SOI nMOSFETs after irradiation. The charge trapped at the shallow trench isolation (STI) corner is the major reason for the post-irradiation hump in the current-voltage characteristics. Pocket p+ implantation reduces the size of the subthreshold hump in short-channel TDBC devices.