Surface loss probabilities of hydrocarbon radicals on amorphous hydrogenated carbon film surfaces
Surface loss probabilities of hydrocarbon radicals on amorphous hydrogenated carbon film surfaces
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DOI：
10.1063/1.372246
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发表时间：
2000-02
影响因子：
3.2
通讯作者：
C. Hopf;T. Schwarz-Selinger;W. Jacob;A. Keudell
中科院分区：
文献类型：
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作者：
C. Hopf;T. Schwarz-Selinger;W. Jacob;A. Keudell
通过在硅基腔壁中沉积非晶氢化碳（C：H）薄膜，研究了碳氢自由基在非晶氢化碳（C：H）薄膜表面的表面损失几率。该空腔暴露于使用不同烃源气体的放电。来自等离子体的粒子可以通过狭缝进入腔体。表面损失概率β通过分析腔内的沉积轮廓来确定。该表面损失概率对应于在表面上有效粘附和经由表面反应形成非反应性挥发性产物的概率的总和。通过比较在CH4、C2H2、C2H4、C2H6放电中测量的沉积曲线，可以得到C2H自由基β=0.80±0.05，C2H3自由基β=0.35±0.1，C2H5自由基β<10−3。因此，C：H膜的生长速率对来自碳氢化合物放电的撞击通量中的不饱和C2Hx物种的任何贡献非常敏感。
The surface loss probabilities of hydrocarbon radicals on the surface of amorphous hydrogenated carbon (C:H) films are investigated by depositing films inside a cavity with walls made from silicon substrates. This cavity is exposed to a discharge using different hydrocarbon source gases. Particles from the plasma can enter the cavity through a slit. The surface loss probability β is determined by analysis of the deposition profile inside the cavity. This surface loss probability corresponds to the sum of the probabilities of effective sticking on the surface and formation of a nonreactive volatile product via surface reactions. By comparing the deposition profiles measured in CH4, C2H2, C2H4, C2H6 discharges one obtains for C2H radicals β=0.80±0.05, for C2H3 radicals β=0.35±0.1, and for C2H5 radicals β<10−3. The growth rate of C:H films is, therefore, very sensitive to any contribution of undersaturated C2Hx species in the impinging flux from a hydrocarbon discharge.