The X-ray sensitivity of semi-insulating polycrystalline CdZnTe thick films
The X-ray sensitivity of semi-insulating polycrystalline CdZnTe thick films
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DOI：
10.1016/j.nima.2008.03.057
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发表时间：
2008-06
影响因子：
1.4
通讯作者：
J. Won;Kihyun Kim;J. Suh;S. Cho;P. Cho;Jinki Hong;Sun Ung Kim
中科院分区：
文献类型：
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作者：
J. Won;Kihyun Kim;J. Suh;S. Cho;P. Cho;Jinki Hong;Sun Ung Kim
X射线灵敏度是表征探测器性能的重要参数之一。研究了半绝缘多晶 CdZnTe:Cl 厚膜的 X 射线灵敏度与电场、平均光子能量、膜厚度和载流子传输参数的关系，并与另一种有前途的探测器材料进行了比较。 350μm厚的多晶CdZnTe薄膜在0.83V/μm的欧姆型和肖特基型探测器中的X射线灵敏度分别约为2.2和6.2μC/cm2/R。
The X-ray sensitivity is one of the important parameters indicating the detector performance. The X-ray sensitivity of semi-insulating polycrystalline CdZnTe:Cl thick films was investigated as a function of electric field, mean photon energy, film thickness, and charge carrier transport parameters and, compared with another promising detector materials. The X-ray sensitivities of the polycrystalline CdZnTe films with 350μm thickness were about 2.2 and 6.2μC/cm2/R in the ohmic-type and Schottky-type detector at 0.83V/μm, respectively.